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| Bulletin I0204J 02/97 IR210SG12HCB PHASE CONTROL THYRISTORS Square 210 mils 4" 1200 V Glassivated MESA Junction Size: Wafer Size: VRRM Class: Passivation Process: Reference IR Packaged Part: 25RIA Series Major Ratings and Characteristics Parameters V TM V RRM I GT V GT IH IL Maximum On-state Voltage Reverse Breakdown Voltage Max. Required DC Gate Current to Trigger Max. Required DC Gate Voltage to Trigger Holding Current Range Maximum Latching Current Units 1.5 V 1200 V 60 mA 1.9 V 10 to 125 mA 200 mA Test Conditions T J = 25C, I T = 25 A T J = 25C, IRRM = 100 A (1) TJ = 25 C, anode supply = 6 V, resistive load TJ = 25 C, anode supply = 6 V, resistive load Anode supply = 6 V, resistive load Anode supply = 6 V, resistive load (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 210 x 210 mils (see drawing) 100 mm, with std. < 100 > flat 370 m 10 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR210SG12HCB Bulletin I0204J 02/97 Ordering Information Table Device Code IR 1 210 2 S 3 G 4 12 5 H 6 CB 7 1 2 3 4 5 6 7 - International Rectifier Device Chip Dimension in Mils Type of Device: S = Solderable SCR Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) CB = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in microns (mils) 2 www.irf.com IR210SG12HCB Bulletin I0204J 02/97 Wafer Layout TOP VIEW N 208 Basic Cells All dimensions are in millimiters www.irf.com 3 |
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